中国·深圳

11.4-5, 2017


  Mr. David Bie  

Mr. David Bie


美国资深声学工程师

Senior Acoustic Engineer in the United States

===========================

David Bie现任职于斯贝克电子(嘉善)有限公司,担任研发部声学经理职务,为这家专注于设计及制造专业扬声器的公司提供强大技术支持。David对声学的热爱始于高中阶段,为了不断改进他的车载音响,他利用休息时间到无线电广播室兼职,同时向他哥哥学习地下摇滚乐队的电子贝司演奏。

大学就读于Georgia Institute of Technology (佐治亚理工学院),师从Marshall LeachEugene Patronis两位教授,并全面参与他们的实验室工作,积累了丰富的电子及声学经验,于1988年获得电子工程学士学位。

毕业之后加入JBL公司,学习压缩驱动器设计及生产技术支持。于此期间,在加州州立大学北岭分校进修,并在1995年获得应用力学硕士学位。1996年离开JBL,随后任职于意大利RCF,美国EV,中国GGECEminence Tymphany

David已被授予多项专利,在其所从事领域发表了大量论文,并将继续投身于专业扬声器和音响系统的设计与改善,不断享受声学所带来的乐趣。

 

David Bie is the Acoustic R&D Department manager at Speaker Electronic in JiaShan China, a company which specializes in design and manufacture of Pro Audio loudspeakers.  His love of audio began in high school, when he earned money from a part time job at Radio Shack in order to repeatedly improve his car stereo, and then learned to play the electric bass to form a basement rock band with his brother.  As a student at the Georgia Institute of Technology, he collaborated extensively with Professors Marshall Leach and Eugene Patronis to gain laboratory experience in both electronics and acoustics, graduating with a degree in Electrical Engineering in 1988.  He then joined JBL where he learned to design and provide manufacturing support of high frequency compression drivers, and while at JBL, he attended night school at California State University Northridge, completing his Masters degree in Mechanics in 1995.  After leaving JBL in 1996, David has continued his Pro Audio career working at RCF in Italy, at EV in U.S.A., and at GGEC, Eminence and Tymphany in China.  David has been awarded several patents, published a number of papers in his field and continues to enjoy contributing to the design of many new professional transducers and speaker systems.




Copyright © ISEAT All Rights Reserved

请关注
“电声技术国际研讨会”官方微信
For more info. , please visit ISEAT
official Wechat

微信号:ISEATorg
Wechat:ISEATorg

官方网站:www.iseat.org
Official website:www.iseat.org

th;">